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Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - Viktor Sverdlov
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Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - gebunden oder broschiert

ISBN: 3709103819

[SR: 6651263], Hardcover, [EAN: 9783709103814], Springer, Springer, Book, [PU: Springer], Springer, Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., 13718, Microelectronics, 13707, Electronics, 227544, Electrical & Electronics, 173515, Engineering, 173507, Engineering & Transportation, 1000, Subjects, 283155, Books, 465600, New, Used & Rental Textbooks, 468220, Business & Finance, 468226, Communication & Journalism, 468204, Computer Science, 468224, Education, 468212, Engineering, 468206, Humanities, 468222, Law, 468228, Medicine & Health Sciences, 684283011, Reference, 468216, Science & Mathematics, 468214, Social Sciences, 684300011, Test Prep & Study Guides, 2349030011, Specialty Boutique, 283155, Books

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Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - Viktor Sverdlov
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
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Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - gebunden oder broschiert

ISBN: 3709103819

[SR: 6656739], Hardcover, [EAN: 9783709103814], Springer, Springer, Book, [PU: Springer], Springer, Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., 13718, Microelectronics, 13707, Electronics, 227544, Electrical & Electronics, 173515, Engineering, 173507, Engineering & Transportation, 1000, Subjects, 283155, Books, 465600, New, Used & Rental Textbooks, 468220, Business & Finance, 468226, Communication & Journalism, 468204, Computer Science, 468224, Education, 468212, Engineering, 468206, Humanities, 468222, Law, 468228, Medicine & Health Sciences, 684283011, Reference, 468216, Science & Mathematics, 468214, Social Sciences, 684300011, Test Prep & Study Guides, 2349030011, Specialty Boutique, 283155, Books

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Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - Viktor Sverdlov
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - gebunden oder broschiert

ISBN: 3709103819

[SR: 6651263], Hardcover, [EAN: 9783709103814], Springer, Springer, Book, [PU: Springer], Springer, Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., 13718, Microelectronics, 13707, Electronics, 227544, Electrical & Electronics, 173515, Engineering, 173507, Engineering & Transportation, 1000, Subjects, 283155, Books, 465600, New, Used & Rental Textbooks, 468220, Business & Finance, 468226, Communication & Journalism, 468204, Computer Science, 468224, Education, 468212, Engineering, 468206, Humanities, 468222, Law, 468228, Medicine & Health Sciences, 684283011, Reference, 468216, Science & Mathematics, 468214, Social Sciences, 684300011, Test Prep & Study Guides, 2349030011, Specialty Boutique, 283155, Books

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Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - Viktor Sverdlov
Vergriffenes Buch, derzeit bei uns nicht verfügbar.
(*)
Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) - gebunden oder broschiert

ISBN: 3709103819

[SR: 6656739], Hardcover, [EAN: 9783709103814], Springer, Springer, Book, [PU: Springer], Springer, Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., 13718, Microelectronics, 13707, Electronics, 227544, Electrical & Electronics, 173515, Engineering, 173507, Engineering & Transportation, 1000, Subjects, 283155, Books, 465600, New, Used & Rental Textbooks, 468220, Business & Finance, 468226, Communication & Journalism, 468204, Computer Science, 468224, Education, 468212, Engineering, 468206, Humanities, 468222, Law, 468228, Medicine & Health Sciences, 684283011, Reference, 468216, Science & Mathematics, 468214, Social Sciences, 684300011, Test Prep & Study Guides, 2349030011, Specialty Boutique, 283155, Books

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Viktor Sverdlov:
Strain-Induced Effects in Advanced MOSFETs - gebunden oder broschiert

2010, ISBN: 9783709103814

ID: 14424137

2011, Hardcover, Buch, [PU: Springer Wien]

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Details zum Buch
Strain-Induced Effects in Advanced MOSFETs
Autor:

Sverdlov, Viktor

Titel:

Strain-Induced Effects in Advanced MOSFETs

ISBN-Nummer:

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Detailangaben zum Buch - Strain-Induced Effects in Advanced MOSFETs


EAN (ISBN-13): 9783709103814
ISBN (ISBN-10): 3709103819
Gebundene Ausgabe
Erscheinungsjahr: 2010
Herausgeber: Springer-Verlag KG
252 Seiten
Gewicht: 0,633 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 09.04.2011 21:17:05
Buch zuletzt gefunden am 15.08.2017 07:54:20
ISBN/EAN: 9783709103814

ISBN - alternative Schreibweisen:
3-7091-0381-9, 978-3-7091-0381-4


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