Sebastian Walde: AlN base layers for UV LEDs - Taschenbuch
2021, ISBN: 3736974515
[EAN: 9783736974517], Neubuch, [PU: Cuvillier], nach der Bestellung gedruckt Neuware -To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work… Mehr…
[EAN: 9783736974517], Neubuch, [PU: Cuvillier], nach der Bestellung gedruckt Neuware -To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapphire substrates. The main issues for UV LEDs are still a limited internal quantum efficiency due to a high amount of threading dislocations along with a limited light extraction efficiency due to total internal reflection at the AlN/sapphire interface. Therefore, high-temperature annealing of AlN/sapphire layers and growth on nanopatterned sapphire substrates were comprehensively investigated.High-temperature annealing was applied to AlN layers of different strain and thickness grown by metalorganic vapour phase epitaxy (MOVPE). The threading dislocation density could be successfully reduced by more than one order of magnitude down to 6 × 108 cm-2.Wave optical simulations of UV LEDs on nanopatterned sapphire substrates (NPSS) were conducted and showed a potential increase in light extraction efficiency compared to a planar substrate. The optimized MOVPE growth process on sapphire nanopillars and sapphire nanoholes resulted in a fully coalesced and atomically smooth AlN surface. The threading dislocation density was reduced to 1 ×109 cm-2 for AlN on both nanopillars and nanoholes.UVC LEDs emitting at 265 nm wavelength were grown on top of the developed templates. Increased internal efficiency was obtained by reduced dislocation density and more efficient light extraction was achieved on NPSS in case of a transparent heterostructure and reflective contacts. Thus, the developed templates yield considerable improvement in light output compared to conventional templates. 156 pp. Englisch, Books<
Sebastian Walde: AlN base layers for UV LEDs - Taschenbuch
ISBN: 9783736974517
Paperback, [PU: Cuvillier], To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapph… Mehr…
Paperback, [PU: Cuvillier], To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapphire substrates. The main issues for UV LEDs are still a limited internal quantum efficiency due to a high amount of threading dislocations along with a limited light extraction efficiency due to total internal reflection at the AlN/sapphire interface. Therefore, high-temperature annealing of AlN/sapphire layers and growth on nanopatterned sapphire substrates were comprehensively investigated. High-temperature annealing was applied to AlN layers of different strain and thickness grown by metalorganic vapour phase epitaxy (MOVPE). The threading dislocation density could be successfully reduced by more than one order of magnitude down to 6 × 108 cm-2. Wave optical simulations of UV LEDs on nanopatterned sapphire substrates (NPSS) were conducted and showed a potential increase in light extraction efficiency compared to a planar substrate. The optimized MOVPE growth process on sapphire nanopillars and sapphire nanoholes resulted in a fully coalesced and atomically smooth AlN surface. The threading dislocation density was reduced to 1 ×109 cm-2 for AlN on both nanopillars and nanoholes. UVC LEDs emitting at 265 nm wavelength were grown on top of the developed templates. Increased internal efficiency was obtained by reduced dislocation density and more efficient light extraction was achieved on NPSS in case of a transparent heterostructure and reflective contacts. Thus, the developed templates yield considerable improvement in light output compared to conventional templates., Science: General Issues<
[EAN: 9783736974517], Neubuch, [PU: Cuvillier], nach der Bestellung gedruckt Neuware -To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work… Mehr…
[EAN: 9783736974517], Neubuch, [PU: Cuvillier], nach der Bestellung gedruckt Neuware -To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapphire substrates. The main issues for UV LEDs are still a limited internal quantum efficiency due to a high amount of threading dislocations along with a limited light extraction efficiency due to total internal reflection at the AlN/sapphire interface. Therefore, high-temperature annealing of AlN/sapphire layers and growth on nanopatterned sapphire substrates were comprehensively investigated.High-temperature annealing was applied to AlN layers of different strain and thickness grown by metalorganic vapour phase epitaxy (MOVPE). The threading dislocation density could be successfully reduced by more than one order of magnitude down to 6 × 108 cm-2.Wave optical simulations of UV LEDs on nanopatterned sapphire substrates (NPSS) were conducted and showed a potential increase in light extraction efficiency compared to a planar substrate. The optimized MOVPE growth process on sapphire nanopillars and sapphire nanoholes resulted in a fully coalesced and atomically smooth AlN surface. The threading dislocation density was reduced to 1 ×109 cm-2 for AlN on both nanopillars and nanoholes.UVC LEDs emitting at 265 nm wavelength were grown on top of the developed templates. Increased internal efficiency was obtained by reduced dislocation density and more efficient light extraction was achieved on NPSS in case of a transparent heterostructure and reflective contacts. Thus, the developed templates yield considerable improvement in light output compared to conventional templates. 156 pp. Englisch, Books<
Paperback, [PU: Cuvillier], To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapph… Mehr…
Paperback, [PU: Cuvillier], To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapphire substrates. The main issues for UV LEDs are still a limited internal quantum efficiency due to a high amount of threading dislocations along with a limited light extraction efficiency due to total internal reflection at the AlN/sapphire interface. Therefore, high-temperature annealing of AlN/sapphire layers and growth on nanopatterned sapphire substrates were comprehensively investigated. High-temperature annealing was applied to AlN layers of different strain and thickness grown by metalorganic vapour phase epitaxy (MOVPE). The threading dislocation density could be successfully reduced by more than one order of magnitude down to 6 × 108 cm-2. Wave optical simulations of UV LEDs on nanopatterned sapphire substrates (NPSS) were conducted and showed a potential increase in light extraction efficiency compared to a planar substrate. The optimized MOVPE growth process on sapphire nanopillars and sapphire nanoholes resulted in a fully coalesced and atomically smooth AlN surface. The threading dislocation density was reduced to 1 ×109 cm-2 for AlN on both nanopillars and nanoholes. UVC LEDs emitting at 265 nm wavelength were grown on top of the developed templates. Increased internal efficiency was obtained by reduced dislocation density and more efficient light extraction was achieved on NPSS in case of a transparent heterostructure and reflective contacts. Thus, the developed templates yield considerable improvement in light output compared to conventional templates., Science: General Issues<
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Buch in der Datenbank seit 2021-10-04T16:18:22+02:00 (Vienna) Detailseite zuletzt geändert am 2024-02-04T01:12:01+01:00 (Vienna) ISBN/EAN: 9783736974517
ISBN - alternative Schreibweisen: 3-7369-7451-5, 978-3-7369-7451-7 Alternative Schreibweisen und verwandte Suchbegriffe: Autor des Buches: wälde Titel des Buches: layers
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Autor/in: Sebastian Walde Titel: Innovationen mit Mikrowellen und Licht; AlN base layers for UV LEDs - Forschungsberichte aus dem Ferdinand-Braun-Institut für Höchstfrequenztechnik Verlag: Cuvillier Verlag Erscheinungsjahr: 2021-06-22 Göttingen; DE Gedruckt / Hergestellt in Deutschland. Sprache: Englisch 53,88 € (DE) 55,40 € (AT) No longer receiving updates
