Ion Implantation and Synthesis of Materials - neues Buch

EAN (ISBN-13): 9783540452980
ISBN (ISBN-10): 3540452982
Erscheinungsjahr: 2007
Herausgeber: Springer Berlin
263 Seiten
Sprache: eng/Englisch

Buch in der Datenbank seit 2010-03-02T10:27:45+01:00 (Vienna)
Detailseite zuletzt geändert am 2023-03-31T21:49:06+02:00 (Vienna)
ISBN/EAN: 9783540452980

ISBN - alternative Schreibweisen:
3-540-45298-2, 978-3-540-45298-0
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: michael mayer, michael nast, james michael, peter koslowski, nastasi
Titel des Buches: synthesis, ion

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Daten vom Verlag:

Autor/in: Michael Nastasi; James W. Mayer
Titel: Ion Implantation and Synthesis of Materials
Verlag: Springer; Springer Berlin
263 Seiten
Erscheinungsjahr: 2007-05-16
Berlin; Heidelberg; DE
Sprache: Englisch
96,29 € (DE)
99,00 € (AT)
118,00 CHF (CH)
Available
XIV, 263 p. 131 illus.

EA; E107; eBook; Nonbooks, PBS / Physik, Astronomie/Atomphysik, Kernphysik; Teilchen- und Hochenergiephysik; Verstehen; Diffusion; Doping; Implanted shallow junctions; Ion implantation; Ion ranges; Ion-modified materials; Slicing silicon; crystal; distribution; materials properties; materials science; C; Accelerator Physics; Condensed Matter Physics; Optical Materials; Characterization and Analytical Technique; Physical Chemistry; Physics and Astronomy; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Werkstoffprüfung; Physikalische Chemie; BB

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Presents the basics and current state of the art in the field of ion implantation-based materials physics Includes supplementary material: sn.pub/extras