2012, ISBN: 9783709173725
Editor: Selberherr, Siegfried, Editor: Stippel, Hannes, Editor: Strasser, Ernst, Springer, Paperback, Auflage: Softcover reprint of the original 1st ed. 1993, 527 Seiten, Publiziert: 2012… Mehr…
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2012, ISBN: 9783709173725
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2012, ISBN: 9783709173725
Trade paperback, New., Trade paperback (US). Glued binding. 507 p., Vienna, [PU: Springer]
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2012, ISBN: 9783709173725
Trade paperback, New., Trade paperback (US). Glued binding. 507 p., Vienna, [PU: Springer]
alibris.co.uk |
2012, ISBN: 9783709173725
Editor: Selberherr, Siegfried, Editor: Stippel, Hannes, Editor: Strasser, Ernst, Springer, Paperback, Auflage: Softcover reprint of the original 1st ed. 1993, 527 Seiten, Publiziert: 2012… Mehr…
2012
ISBN: 9783709173725
Springer Verlag, 2012. Paperback. New. 524 pages. 9.50x6.75x1.00 inches., Springer Verlag, 2012, 6
2012, ISBN: 9783709173725
Trade paperback, New., Trade paperback (US). Glued binding. 507 p., Vienna, [PU: Springer]
2012, ISBN: 9783709173725
Trade paperback, New., Trade paperback (US). Glued binding. 507 p., Vienna, [PU: Springer]
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Detailangaben zum Buch - Simulation of Semiconductor Devices and Processes: Vol.5
EAN (ISBN-13): 9783709173725
ISBN (ISBN-10): 3709173728
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2013
Herausgeber: Springer
504 Seiten
Gewicht: 0,888 kg
Sprache: Englisch
Buch in der Datenbank seit 2009-11-15T20:18:28+01:00 (Vienna)
Detailseite zuletzt geändert am 2024-03-20T14:20:05+01:00 (Vienna)
ISBN/EAN: 9783709173725
ISBN - alternative Schreibweisen:
3-7091-7372-8, 978-3-7091-7372-5
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: ernst may, siegfried ernst, else strasser, hello ernst, stippel, ernst hannes, siegfried springer, selber
Titel des Buches: semiconductor devices
Daten vom Verlag:
Autor/in: Siegfried Selberherr; Hannes Stippel; Ernst Strasser
Titel: Simulation of Semiconductor Devices and Processes - Vol.5
Verlag: Springer; Springer Wien
507 Seiten
Erscheinungsjahr: 2012-10-18
Vienna; AT
Gedruckt / Hergestellt in Niederlande.
Gewicht: 0,907 kg
Sprache: Englisch
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XX, 507 p.
BC; Computer Engineering; Hardcover, Softcover / Informatik, EDV/Sonstiges; Computerhardware; Verstehen; algorithms; development; modeling; semiconductor devices; simulation; software; Electronics and Microelectronics, Instrumentation; Simulation and Modeling; Computer-Aided Engineering (CAD, CAE) and Design; Computer Engineering and Networks; Electronics and Microelectronics, Instrumentation; Computer Modelling; Computer-Aided Engineering (CAD, CAE) and Design; Elektronik; Computermodellierung und -simulation; Computer-Aided Design (CAD); BB
Challenges to Achieving Accurate Three-Dimensional Process Simulation.- Modeling Nano-Structure Devices.- About Boltzmann Equations for Transport Modeling in Semiconductors.- Applied TCAD in Mega-Bits Memory Design.- Process Flow Representation within the VISTA Framework.- A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems.- Modeling of VLSI MOSFET Characteristics Using Neural Networks.- Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Circuit Simulation of VLSI Circuits.- Simulation of Self-Heating Effects in a Power p-i-n Diode.- Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D-Simulation.- On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance.- 2-D Electrothermal Simulation and Failure Analysis of GTO Turn-off with Complete Chopper Circuit Parasitics.- 3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool.- Nonlocal Oxide Injection Models.- Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields.- Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS.- Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors.- The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation.- Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation.- Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation.- Further Improvements in Nonsymmetric Hybrid Iterative Methods.- Rigorous Microscopic Drift-Diffusion Theory and its Applications to Nanostructures.- Atomistic Evaluation of Diffusion Theories for the Diffusion of Dopants in Vacancy Gradients.- Self Diffusion in Silicon Using the Ackland Potential.- Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon.- 3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors.- Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport.- A Numerical Implementation of the Energy Balance Equations Based on Physical Considerations.- Construction of Stable Discretization Schemes for the Hydrodynamic Device Model.- Three-Dimensional Implementation of a Unified Transport Model.- Mixed-Mode Multi-Dimensional Device and Circuit Simulation.- Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions.- Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon.- Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors.- Simulation of Denuded Zone Formation in CZ Silicon.- A Closed Hydrodynamic Model for Hot-Carrier Transport in Submicron Semiconductor Devices.- Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors.- Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures.- Inclusion of Electron-Electron Scattering in the Spherical Harmonics Expansion Treatment of the Boltzmann Transport Equation.- Quantitative 2D Stress Dependent Oxidation with Viscoelastic Model.- Oxidation Simulation and Growth Kinetics of Thin SiO2 in Pure N2O.- Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation.- Mechanical Stress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films.- Monte Carlo Simulation of Carrier-Carrier Interaction for Silicon Devices.- Monte Carlo MOSFET Simulator Including Inversion Layer Quantization.- Three-Dimensional Monte Carlo Simulation of Submicronic Devices.- Monte Carlo Analysis of Voltage Fluctuations in Two-Terminal Semiconductor Devices.- Simulation of Sputter Deposition Process by DUPSIM.- Process Simulation for Nonplanar Structures with the Multigrid Solver LiSS.- Multizone Adaptive Grid Generation Technique for Multilayer Multistep Process Simulation.- Process Optimization in a Production Environment Using Simulation and Taguchi Methods.- Optimization of DMOS Transistors for Smart Power Technologies by Simulation and Response Surface Methods.- Improved Technology Understanding through Using Process Simulation and Measurements.- Hot Carrier Suppression for an Optimized 10V CMOS Process.- Electrical Parameter Sensitivity of Deep Submicron and Micron MOSFET Devices with Variation in Processing Conditions.- Predicting Manufacturing Variabilities for Deep Submicron Technologies: Integration of Process, Device, and Statistical Simulations.- An Investigation of Coupled and Decoupled Iterative Algorithms for Energy Balance Calculations.- On the Scharfetter-Gummel Box-Method.- A Spectral Method for the Numerical Simulation of Transit-Time Devices.- PARDESIM — A Parallel Device Simulator on a Transputer Based MIMD-Machine.- An Efficient and Accurate Method to Calculate the Two-Dimensional Scattering Rates in Heterostructure Semiconductors.- Two-Dimensional Numerical Analysis on the Diffusion-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors.- High Speed Performance of Si Homo-and Si/Si1-xGex Heterojunction Bipolar Transistors.- Analysis of a CMOS-Compatible Vertical Bipolar Transistor.- Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F.- A Smallsignal Databased HEMT Model for Nonlinear Time Domain Simulation.- Noise in Si/Si1-xGex n-channel HEMTs and p-channel FETs.- Drift Velocities and Momentum Distributions of Hot Carriers in MOSFETs at Low Supply Voltages.- Numerical Simulation of MOSFETs Gate Capacitances for the Evaluation of Hot-Carrier Generated Interface States and Trapped Carriers.- An Analytical Device Model Including Velocity Overshoot for Subquartermicrometer MOSFET.- Numerical Modeling of Electrothermal Effects in Semiconductor Devices.- Analysis of Charge Storage in Polysilicon Contacts.- Simulation of the Conduction Mechanisms in Polycrystalline Silicon Thin Film Transistors.- Extraction of Parameters for Balance Equations from Monte-Carlo Simulations.- The Influence of Technological Parameters on Ultra-Short Gate Si-NMOS Transistor Performances.- Semianalytical Universal Simulation of the Electrical Properties of the Permeable Base Transistor.- The Static and Dynamic Behaviour of NPT-IGBTs with Different p+-Anode Designs.- Numerical Modeling and Simulation of Multi-Electrode Semiconductor Optical Amplifiers.- Simulation of Carrier Heating Induced Picosecond Operation of GaInAsP/InP Laser Diode.- Computer Simulation of Inverse Problems of Crystal Growth and Photoconductivity of Graded Band Gap Semiconductors.- Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes.- Generation and Amplification of Microwave Power in Submicron n+nn+ Diodes.- Modelling of IGBTs and LIGBTs for Power Circuit Simulation.- Physical IGBT Model for Circuit Simulations.- Model-Independent Distortion Analysis in SPICE Realized for Complex Modelled Bipolar and MOS Transistors.- A Newly Proposed Delay Improvement on CMOS/SOI Future Technology.- Simulation of a Novel Scheme for 700-1000 V Wiring Applications.- A General Simulation Method for Etching and Deposition Processes.- Two Dimensional Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Considering Damage Formation.- MOSFET Two-Dimensional Doping Profile Determination.- Determination of EBIC Response by Two-Dimensional Device Simulation.- Radiative Heat Transfer with Quasi Monte Carlo Methods.- Numerical Simulation of Piezo-Hall Effects in n-Doped Silicon Magnetic Sensors.- Electro-Elastic Simulation of Piezoresistive Pressure Sensor.- Models for the Chemo-Physical Reactions at the Sensitive Layer of Semiconductor Gas Sensors and their Application in the Simulation of these Devices.- Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells.- Simulation in High Efficiency Solar Cell Research.- Modeling of Breakdown in SOI MOSFETs.- 3D Simulation of MOS Transistors with Inversion Condition in Two Directions.- Quasi Two-Dimensional Numerical Simulation of SiGe/Si MOSFETs.- Large-Signal RF and DC Performance of p-Type Diamond FETs.- 3D Grid Generation for Semiconductor Devices Using a Fully Flexible Refinement Approach.- Grid and Geometry Techniques for Multi-Layer Process Simulation.- Multigrid Becomes a Competitive Algorithm for some 3D Device Simulation Problems.- A 2D Analytical Model of Current-Flow in Lateral Bipolar Transistor Structures.- Consistent Treatment of Carrier Emission and Capture Kinetics in Electrothermal and Energy Transport Models.- Modeling of Electron-Hole Scattering in Semiconductor Power Device Simulation.- Modeling of Localized Lifetime Tailoring in Silicon Devices.- Analytical Model of the Metal-Semiconductor Contact for Device Simulation.- Nonlinear Contact Resistance and Inhomogeneous Current Distribution at Ohmic Contacts.- Simulations of Carrier-Blocking Effects on Cutoff Frequency Characteristics for AlGaAs/GaAs HBTs with Insulating and Semi-Insulating External Collectors.- Non-Stationary Transport HBT Modeling Under Non-Isothermal Conditions.- An Enhanced Two Dimensional Hydrodynamic Energy Model for Transient Time Simulation of Complex Heterostructure Field Effect Transistors.- Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs.- Helena: A Physical Modeling for the DC, AC, Noise and Non Linear HEMT Performance.- Lifetime Calculations of MOSFET’s Using Depth-Dependent Non-Local Impact Ionization.- Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics.- The MicroMOS 3D Monte Carlo Simulation Program - a Tool for Verifying the MINIMOS Mobility Models.- Accurate Determination of Silicon Inversion Layer Mobility by the Monte Carlo Method.- Importance of Hole Generation on Modeling and Simulation of Schottky and MESFET Structures.- Thermionic Current in Direct-Indirect Energy-Gap GaAs/AlxGa1-xAs Interfaces.- Preliminary Results of Quantum Directional Coupler Simulation Using a Beam Propagation Method.- Numerical Simulation of Auger-Induced Hot Electron Transport in InGaAsP/InP Double Heterojunction Laser Diodes: Hydrodynamics versus Drift and Diffusion.- Author Index.Weitere, andere Bücher, die diesem Buch sehr ähnlich sein könnten:
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