2010, ISBN: 9783838380230

[ED: Taschenbuch], [PU: LAP LAMBERT Academic Publishing], This thesis is aimed to contribute to the present physical knowledge on native point defects in Si with our investigation on the … Mehr…

[ED: Taschenbuch], [PU: LAP LAMBERT Academic Publishing], This thesis is aimed to contribute to the present physical knowledge on native point defects in Si with our investigation on the diffusive properties of self-interstitials in crystalline silicon and on their interactions with some impurity species, such as carbon and boron atoms. Self-interstitials detection is a quite difficult task, still they are involved in many phenomena, such as dopant diffusion, indirect observations of self-interstitials are more easily accessible. In our studies, we got advantages from the enhanced diffusion of boron realized by a supersaturation of self-interstitials. In particular, the broadening of very narrow B-doped (or B "delta doped") Si layers was widely used as a very sensitive marker for self-interstitials. Molecular beam epitaxy technique was extensively used to realize such B delta doped layers, about 3 nanometer wide. In addition, the same growing method was used also to produce different Si-sample structures, with various B and/or C- doped..., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 236, [GW: 369g], Banküberweisung, PayPal, Klarna-Sofortüberweisung, [CT: Sonstiges / Sonstiges]<

2010, ISBN: 9783838380230

[ED: Taschenbuch], [PU: LAP LAMBERT Academic Publishing], This thesis is aimed to contribute to the present physical knowledge on native point defects in Si with our investigation on the … Mehr…

[ED: Taschenbuch], [PU: LAP LAMBERT Academic Publishing], This thesis is aimed to contribute to the present physical knowledge on native point defects in Si with our investigation on the diffusive properties of self-interstitials in crystalline silicon and on their interactions with some impurity species, such as carbon and boron atoms. Self-interstitials detection is a quite difficult task, still they are involved in many phenomena, such as dopant diffusion, indirect observations of self-interstitials are more easily accessible. In our studies, we got advantages from the enhanced diffusion of boron realized by a supersaturation of self-interstitials. In particular, the broadening of very narrow B-doped (or B "delta doped") Si layers was widely used as a very sensitive marker for self-interstitials. Molecular beam epitaxy technique was extensively used to realize such B delta doped layers, about 3 nanometer wide. In addition, the same growing method was used also to produce different Si-sample structures, with various B and/or C- doped..., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 236, [GW: 369g], Banküberweisung, PayPal, Klarna-Sofortüberweisung, [CT: Sonstiges / Sonstiges]<

ISBN: 9783838380230

Paperback, [PU: LAP Lambert Academic Publishing], This thesis is aimed to contribute to the present physical knowledge on native point defects in Si with our investigation on the diffusiv… Mehr…

Paperback, [PU: LAP Lambert Academic Publishing], This thesis is aimed to contribute to the present physical knowledge on native point defects in Si with our investigation on the diffusive properties of self-interstitials in crystalline silicon and on their interactions with some impurity species, such as carbon and boron atoms. Self-interstitials detection is a quite difficult task, still they are involved in many phenomena, such as dopant diffusion, indirect observations of self-interstitials are more easily accessible. In our studies, we got advantages from the enhanced diffusion of boron realized by a supersaturation of self-interstitials. In particular, the broadening of very narrow B-doped (or B "delta doped") Si layers was widely used as a very sensitive marker for self-interstitials. Molecular beam epitaxy technique was extensively used to realize such B delta doped layers, about 3 nanometer wide. In addition, the same growing method was used also to produce different Si-sample structures, with various B and/or C- doped regions, tailored on purpose to conduct specific experiments., Physics<

ISBN: 9783838380230

Gebundene Ausgabe

SELF-INTERSTITIAL DIFFUSION AND CLUSTERING IN CRYSTALLINE Si ab 78.99 € als Taschenbuch: Experimental analysis of the interactions between the point defect and carbon or boron atoms. Aus … Mehr…

SELF-INTERSTITIAL DIFFUSION AND CLUSTERING IN CRYSTALLINE Si ab 78.99 € als Taschenbuch: Experimental analysis of the interactions between the point defect and carbon or boron atoms. Aus dem Bereich: Bücher, English, International, Englische Taschenbücher, Medien > Bücher nein Taschenbuch, LAP LAMBERT Academic Publishing<

2010, ISBN: 3838380231

Kartoniert / Broschiert Physik, mit Schutzumschlag 11, [PU:LAP LAMBERT Academic Publishing]